Figure 1: The experimental setup.
From: Evolution of opto-electronic properties during film formation of complex semiconductors
(a) Schematic drawing of the PVD chamber and the WLR and ED-XRD measurement setup used to study the multi-stage co-evaporation process of Cu(In,Ga)Se2 films. An electron microscope image of the studied sample is shown on top, combined with its band gap gradient throughout the layer and a sketch of the specular and diffuse white light reflections. (b) Time evolution of the ED-XRD pattern and the WLR spectra during the three stages of the co-evaporation process.
