Figure 3: Evolution of the sample properties during the deposition process.
From: Evolution of opto-electronic properties during film formation of complex semiconductors
(a) deposition rate during process stages, (b) substrate temperature, (c) crystalline phases detected by ED-XRD (d) diffraction signals, (e) surface roughness, (f) minimum band gap energy, (g) sub-gap tail energy. It should be noted that the band gap and the sub-gap tail energy depend on temperature. The missing data of the 112 diffraction signal in stage 2 was caused by an electron injection period of the synchrotron system.
