Figure 4: Correlation of optical and structural/compositional properties.
From: Evolution of opto-electronic properties during film formation of complex semiconductors
(a) Correlation of the band gap energy with the 006 (In,Ga)2Se3 and 112 CIGS lattice spacing. The inset shows the region close to the points of stoichiometry. It should be noted, that due to the Ga gradient a small offset between the measured Eg,min and the band gap energy corresponding to a certain lattice plane distance may exist. (b) Correlation of the sub-gap tail-energy with the process duration and the Cu concentration.
