Figure 8: Test results of the fabricated inertial switch. | Scientific Reports

Figure 8: Test results of the fabricated inertial switch.

From: Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High g Acceleration for IoT Applications

Figure 8

(a) The test switch is not triggered under the reverse acceleration 1309 g. (b–f) Test reverse acceleration threshold athr (1320 g, 846 g, 770 g, 648 g, 528 g) of the fabricated inertial microswitch with constraint layer when the gap x2 between proof mass and reverse constraint block is 20 μm, 23 μm, 27 μm, 29 μm and 30 μm, respectively.

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