Figure 1: PECVD synthesis and microscopic properties of h-BN.
From: Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
(a) Schematic illustration of the growth procedure of h-BN. Inset: optical image of h-BN crystal on Cu foil. The triangle’s one side is 97 μm. (b) TEM image of monolayer h-BN. Inset: the corresponding SAED pattern. (c) AFM height image of monolayer h-BN domains transferred onto a 90 nm SiO2/Si substrate and the corresponding height profile along the white dashed line. (d,e) Raman mapping and Raman spectrum of h-BN single crystal, excited by a 532 nm wavelength laser for 20 s, and the laser power is 50 mW. (f,g) XPS spectra of B 1 s and N 1 s core level, respectively.
