Figure 1
From: Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors
(a) Schematic of the photodetector under consideration. A single sheet of graphene is contacted by source and drain electrodes, and is separated from the gate electrode by a dielectric. Monochromatic light illuminates the device. (b) Cross-section of the graphene device with the coordinate system and the dimensions used in the simulations. The oxide is lossless and dispersionless with a dielectric constant of 3.9. (c) Position of the graphene Dirac point along the length of the FET. Curves from top to bottom correspond to gate voltages of 0, 0.5, 0.75, 1, 1.25, 1.5, 2, and 3 V. (d) Dark transfer characteristic at room temperature computed from the band-bending of panel (c).
