Figure 4: Strain variation with distance from the ion-implanted surface.
From: 3D lattice distortions and defect structures in ion-implanted nano-crystals
(A) Line profiles of normal strain, εyy, and in-plane strains, εxx and εzz, plotted as a function of distance from the gallium-implanted surface of crystal A. (B) Line profiles of εxx, εyy and εzz plotted as a function of distance from the gallium-implanted surface of crystal C. Markers show the average strain value at each depth. The error bars capture the standard deviation of εxx, εyy and εzz at each specific depth, considering variation over a 0.3 × 0.3 μm2 area. The x, y and z directions follow the conventions shown in Figs 2(B) and 3(B) for crystals A and C respectively.
