Figure 5
From: Crystallisation-enhanced bulk hole mobility in phenothiazine-based organic semiconductors
ImZ as a function of frequency for hole-only devices made of O-1 (a), O-2 (b) and O-3 (c) films at different values of the dc voltage (the arrows indicate increasing voltage). Film thickness: 920 nm, 575 nm and 470 nm for O-1, O-2 and O-3, respectively.
