Figure 2 | Scientific Reports

Figure 2

From: GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Figure 2

(a) Schematic illustration of the MOVPE-grown prototype structure. The active region consists of five type-II GaAs0.967Bi0.033/GaN0.062As0.938 QWs, having respective GaAs1−xBix and GaNyAs1−y layer thicknesses of 10.5 and 9.2 nm – depicted by the closed green circle in Fig. 1(c) – separated by 18.6 nm thick GaAs barriers. (b) High-resolution XRD patterns for the structure described by (a), measured (solid blue line) and simulated (solid red line) about the GaAs (004) reflection. (c) Measured room temperature PL (500 mW pump power; solid blue line) and squared product (αt)2 of the optical absorption α and propagation length t (from transmission measurements; solid red line), for the structure described in (a).

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