Figure 3: Characterization of the fabricated device. | Scientific Reports

Figure 3: Characterization of the fabricated device.

From: A graphene based frequency quadrupler

Figure 3

(a) Raman spectrum of monolayer graphene obtained at the position of the black dot in the inset. (b) Optical microscope image of dual-gated GFET and the white dotted frame shows the graphene location. The scale bar is 10 μm. (c) SEM of the device surface where the graphene boundary can be discovered due to high electrical conductivity of graphene. The length of TG is 2.3 μm.

Back to article page