Figure 1: Design of spin-based complementary operation. | Scientific Reports

Figure 1: Design of spin-based complementary operation.

From: Complementary spin transistor using a quantum well channel

Figure 1

(a) Operation of parallel-type (P-ST) and antiparallel-type spin transistors (AP-ST). The P-ST is on state for VG = “Low” and the AP-ST is on state for VG = “High”. Spin vectors precess around the Rashba axis of the channel. (b) Gate voltage dependence of spin precession angle for a channel length L = 1.6 μm. T = 1.8 K. Gate voltage controls the strength of Rashba effect and spin precession angle. Error bars represent standard deviations.

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