Figure 3: Signals of spin transistor as a function of magnetization alignment between source and drain. | Scientific Reports

Figure 3: Signals of spin transistor as a function of magnetization alignment between source and drain.

From: Complementary spin transistor using a quantum well channel

Figure 3

(a) Device structure. The inset is the scanning electron micrograph of the device which is taken before depositing gate electrode for clarity. (b) Gate control of spin FET signal. Spin transistor consists of an A-type and a B-type electrodes as a source and a drain. The channel length L is 1.6 μm. I = 1 mA, T = 1.8 K. The solid lines are obtained from the gate dependence of the Rashba parameter.

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