Figure 4: Inverter operation using complementary spin transistors.
From: Complementary spin transistor using a quantum well channel
(a) Structure of inverter. The inset is the scanning electron micrograph of the device which is taken before depositing gate electrode for clarity. Gate dependence of output signals for (b) individual transistors and (c) inverter. (d) Output signals with a step input signal. L = 1.3 μm, I = 1 mA, T = 1.8 K. With repeating more than ten times for each logic device, successful operations are obtained for all attempts.
