Figure 3: Effect of SiO2:Al modulation doping on effective minority carrier (hole) lifetime and hole tunnelling current density.
From: Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
(a) Double-side polished 1.6 Ωcm phosphorus-doped 525 μm Cz-Si wafers with RTO/Al-O/SiO2 stacks on both sides (sample Al1) show more than 2 orders of magnitude higher lifetimes compared to the RTO/SiO2 reference sample (Al0). The effective minority carrier lifetime of Al1 at an excess minority carrier concentration corresponding to 1 sun illumination (Δp = 1015 cm−3) is τhole = 1 ms. (b) Hole tunnelling current density under accumulation bias on boron-doped Cz-Si wafers with RTO/Al-O/SiO2 stacks (3 nm total thickness). The Al-O monolayer in sample Al1 enables 1 order of magnitude higher hole current densities at small bias as compared to sample Al0 (RTO/SiO2 reference sample).
