Nature Search

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Linear magnetoresistance is a phenomenon observed in many material systems and could be used in magnetic field sensors. This paper uncovers its microscopic origin showing how it arises from multiple scattering of electrons by low-mobility islands within an inhomogeneous high-mobility semiconductor.

N.V. Kozlova
N. Mori
A. Patanè
ResearchOpen Access02 Oct 2012
Nature Communications

Volume: 3, P: 1-5
Probing and manipulating the Mexican hat-shaped valence band of In₂Se₃

Inverted Mexican hat valence band is a desirable feature of van der Waal materials as it can yield new phases and functionalities, but it has been observed in only a few materials. Here the authors use experiments and calculations to reveal this feature in the van der Waals ferroelectric semiconductor In₂Se₃.

James Felton
Jordan Harknett
Amalia Patanè
ResearchOpen Access22 Jan 2025
Nature Communications

Volume: 16, P: 1-9
High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy

Moiré field-effect transistors based on graphene/hexagonal boron nitride heterostructures are promising for their high room-temperature carrier mobilities and magnetotransport properties. Here, high-temperature molecular beam epitaxy growth of graphene/hBN gives rise to a moiré-fringed hexagonal superlattice with Hofstadter butterfly electronic band structure and quantum magneto-oscillations above room temperature.

Oleg Makarovsky
Richard J. A. Hill
Peter H. Beton
ResearchOpen Access14 Sept 2024
Communications Materials

Volume: 5, P: 1-6
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Encapsulated few-layer InSe exhibits a remarkably high electronic quality, which is promising for the development of ultrathin-body high-mobility nanoelectronics.

Denis A. Bandurin
Anastasia V. Tyurnina
Yang Cao
Research21 Nov 2016
Nature Nanotechnology

Volume: 12, P: 223-227
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

G. W. Mudd
M. R. Molas
A. Patanè
ResearchOpen Access23 Dec 2016
Scientific Reports

Volume: 6, P: 1-10
Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

Ryan Beardsley
Andrey V. Akimov
Anthony J. Kent
ResearchOpen Access03 Jun 2016
Scientific Reports

Volume: 6, P: 1-7
Electron spin coherence near room temperature in magnetic quantum dots

Fabrizio Moro
Lyudmila Turyanska
Amalia Patanè
ResearchOpen Access04 Jun 2015
Scientific Reports

Volume: 5, P: 1-9
Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

D. M. Di Paola
M. Kesaria
A. Patanè
ResearchOpen Access18 Aug 2016
Scientific Reports

Volume: 6, P: 1-8
Correction: Corrigendum: Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

Ryan Beardsley
Andrey V. Akimov
Anthony J. Kent
Amendments and CorrectionsOpen Access19 Aug 2016
Scientific Reports

Volume: 6, P: 1
Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure

The quantum Hall effect has had a profound impact on solid-state physics and has been investigated using different two-dimensional systems, including graphene. Here, the authors investigate graphene encapsulated by a ferroelectric insulator, CuInP₂S₆, where they observe a quantum Hall effect that endures over a wide temperature range in relatively modest magnetic fields.

Anubhab Dey
Nathan Cottam
Amalia Patanè
ResearchOpen Access17 Aug 2023
Communications Physics

Volume: 6, P: 1-9
Van der Waals interfaces in multilayer junctions for ultraviolet photodetection

Shihong Xie
Mustaqeem Shiffa
Amalia Patanè
ResearchOpen Access08 Sept 2022
npj 2D Materials and Applications

Volume: 6, P: 1-9
Resonant tunnelling into the two-dimensional subbands of InSe layers

Limits on the functionality and miniaturization of Si-based devices present barriers towards integration into quantum electronics. The authors present an alternative, resonant tunnelling transistor based on a two-dimensional layered heterostructure, exhibiting multiple regions of negative differential conductance.

Zakhar R. Kudrynskyi
James Kerfoot
Amalia Patanè
ResearchOpen Access21 Jan 2020
Communications Physics

Volume: 3, P: 1-7
A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Electron-electron interactions are known to play an important role in the in-plane transport properties of graphene-based devices. Here, the authors investigate the role of electron-electron interactions on electrons tunnelling between the layers of a graphene/hBN/graphene tunnel transistor and demonstrate the emergence of a Coulomb gap at low temperatures and in quantising magnetic fields.

Evgenii E. Vdovin
Mark T. Greenaway
Laurence Eaves
ResearchOpen Access30 Jun 2023
Communications Physics

Volume: 6, P: 1-8
Universal mobility characteristics of graphene originating from charge scattering by ionised impurities

Graphene exhibits both extremely high electrical conductivity and electron mobility but an incomplete understanding of the underlying mechanisms so far limits potential applications in electrical devices. Here, the authors theoretically and experimentally investigate the role of charged impurities and optical phonons on the conductivity properties of graphene and establish a universal connection between the mobility and conductivity.

Jonathan H. Gosling
Oleg Makarovsky
T. Mark Fromhold
ResearchOpen Access18 Feb 2021
Communications Physics

Volume: 4, P: 1-8

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