Researchers use a pre-orienting layer to achieve nearly single-crystalline GaN pyramidal arrays on amorphous glass substrates. The polycrystalline morphology can be controlled by placing a hole-patterned SiO2 layer on the low-temperature GaN nucleation layer. Light-emitting diodes fabricated by this technique exhibited a luminance of 600 cd m−2.
- Jun Hee Choi
- Andrei Zoulkarneev
- Kinam Kim
