A waveguide–integrated GeSi electro-absorption modulator on silicon with an ultra-low energy consumption of 50 fJ–1bit is presented. Operating in the spectral range of 1539—1553 nm, the CMOS–compatible device has an active area of 30 µm2 and is anticipated to be useful for future communication systems based on large–scale electronic–photonic integration on silicon.
- Jifeng Liu
- Mark Beals
- Jurgen Michel
