Search

Ferroelectric materials are characterized by a spontaneous polarization, which in practical applications is manipulated by an electric field. This study examines how defects affect the switching with atomic resolution, by usingin situaberration-corrected transmission electron microscopy.

The interface between two oxide materials can play host to numerous exotic phenomenon. Here, the authors observe a four order of magnitude change in the conductance at a lanthanum-aluminate–strontium-titanate interface controlled by surface protonation, which can be reversed by exposure to light.

Charge order has been typically reported in doped systems with high d-electron occupancy. Here the authors demonstrate a charge-ordered insulating state in a La-doped SrTiO₃ epitaxial film which has the lowest d-electron occupancy and attribute it to surface distortion that favours electron-phonon coupling.

Understanding two-dimensional electron gas at the LaAlO₃/SrTiO₃ interface to electrical stimuli remains incomplete. Here, the authors reveal that the lattice flexibility of LaAlO₃ and its varied polar distortions under electric fields as central to 2DEG dynamics.

Atomic precision lift-off of ultrathin membranes without artificial release layers can be achieved to facilitate the high-throughput production of scalable, ultrathin, single-crystalline, freestanding perovskite systems.

SrTiO₃-based heterostructures display intriguing low-temperature transport features. Here the authors study LaAlO₃/SrTiO₃ nanoscale crossbar devices, revealing correlations between electron pairing without superconductivity, anomalous Hall effect, and electronic nematicity, suggesting a shared microscopic origin.

The authors demonstrate voltage-controlled multiferroic magnon torque in BiFeO₃ heterostructures, enabling reconfigurable logic-in-memory devices. This work highlights potential for low-power, scalable magnonics in room-temperature computing.

Single-electron transistors are written at the heterointerface of two oxides using an atomic force microscope tip, and the electrons in the device can be controlled by gating and the ferroelectric state of the heterostructure.

Researchers report rewritable nanoscale photodetectors that exploit 2–3 nm nanowire junctions. Large electromagnetic fields in the gap region aid the detector response, which is electric-field-tunable and spans the visible to near-infrared regime.

BaTiO₃ can remain ferroelectric at temperatures up to at least 330 °C when it is strained by self-assembled nanoscale columns of SmO.

A spin–orbit torque efficiency of around 2.7 can be achieved in heterostructures based on the bismuthate BaPb_1−xBi_xO₃, which can be used to drive magnetization switching at current densities of 4 × 10⁵ A cm⁻².

The interface between complex oxides can show effects such as superconductivity or magnetism that can be controlled through parameters such as carrier density. Here, the authors use magnetic force microscopy to study the magnetism at the interface between LaAlO₃/SrTiO₃and its dependency on charge carriers.

The electromechanical response of thin film ferroelectric devices is considerably influenced by ferroelastic domains. Here, the authors observe that these ferroeleastic domains can be stabilized by dislocations, providing feedback for a better control over the properties of these devices.

In ferroelectric thin films, ferroelastic domains affect the features of polarization switching. Gao et al.perform real-time transmission electron microscopy measurements and show that ferroelastic domains can hinder the switching via formation of a transient interface layer with a dipole glass structure.

Spin-polarised electric currents have been studied extensively for use in spintronics, while their spin-neutral counterparts have been largely ignored. Here Shao et al show that such spin-neutral currents can be controlled by the Neel vector orientation of an antiferromagnet and detected using an antiferromagnetic tunnel junction.

A family of topological antiferromagnetic spin textures is realized at room temperature in α-Fe₂O₃, and their reversible and field-free stabilization using a Kibble–Zurek-like temperature cycling is demonstrated.

Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.

A universal mechanical exfoliation method of creating freestanding membranes of complex-oxide materials with different crystal structures and orientations and stacking them to produce a range of artificial heterostructures with hybridized physical properties is described.

Controlling the polarization state in ferroeletric materials is a prerequisite for their application. Here an approach is presented to optically manipulate the polarization of ferroelectric BaTiO₃ by exploiting photogenerated carriers at the interface with a two-dimensional semiconducting MoS₂ film.

The two-dimensional electron gas at an oxide interface is patterned to form a channel with a periodic potential imposed on top. This replicates the textbook Kronig–Penney model and leads to fractionalization of electron bands in the channel.

Electron holography allows the selective orbital occupation and spatial quantum confinement of electrons at the interface between two oxide insulators to be resolved.

Evidence is presented for electron pairing in strontium titanate far above the superconducting transition temperature; such pairs are thought to be the long-sought pre-formed pairs that condense at lower temperatures to give rise to the unconventional superconducting state in this system.