Novel high-κ dielectric materials are identified by automated ab initio calculations on ~1800 oxides. The cubic BeO is found to possess an unprecedented material property of 10 eV for band gap and 275 for dielectric constant. Candidate high-κ oxides are suggested for microelectronic devices such as CPU, DRAM and flash memory.
- Kanghoon Yim
- Youn Yong
- Seungwu Han
