Nature Search

The fourth circuit element

Neil D. Mathur
Research30 Oct 2008
Nature

Volume: 455, P: E13
Training and operation of an integrated neuromorphic network based on metal-oxide memristors

A transistor-free metal-oxide memristor crossbar with low device variability is realised and trained to perform a simple classification task, opening the way to integrated neuromorphic networks of a complexity comparable to that of the human brain, with high operational speed and manageable power dissipation.

M. Prezioso
F. Merrikh-Bayat
D. B. Strukov
Research07 May 2015
Nature

Volume: 521, P: 61-64
Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

Hardware implementation of spiking neural networks holds promise for high energy efficient brain-inspired computing. Here, Prezioso et al. realize the detection of synchrony in a demo circuit composed of 20 metal-oxide memristor synapses connected to a leaky-integrate-and-fire silicon neuron.

M. Prezioso
M. R. Mahmoodi
D. B. Strukov
ResearchOpen Access14 Dec 2018
Nature Communications

Volume: 9, P: 1-8
Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors

By exploiting the nonlinear and analogue tuning properties of memristors, robust security primitives can be fabricated using integrated memristive crossbar circuits.

Hussein Nili
Gina C. Adam
Dmitri B. Strukov
Research09 Mar 2018
Nature Electronics

Volume: 1, P: 197-202
Magnetic confinement of a neutral gas

R. V. E. Lovelace
C. Mehanian
D. M. Lee
Research01 Nov 1985
Nature

Volume: 318, P: 30-36
Anisotropic MagnetoMemristance

Memristors are reconfigurable devices that are switchable between low and high resistive states and are expected to play an important role in the integrated circuit technology of next generation computing. Here, the authors theoretically demonstrate that ring-shaped nanostructures composed of a ferromagnetic material can exhibit memristive properties with performance values in the GHz range.

Francesco Caravelli
Ezio Iacocca
Clodoaldo I. L. de Araujo
ResearchOpen Access27 Jun 2022
Communications Physics

Volume: 5, P: 1-11
Pattern classification by memristive crossbar circuits using ex situ and in situ training

Experimental demonstration of memristor circuits in artificial neural networks is challenging. Here, pattern classification by a single-layer perceptron network is realised with a memristive crossbar circuit, and both in situ and ex situtraining are applied.

Fabien Alibart
Elham Zamanidoost
Dmitri B. Strukov
Research25 Jun 2013
Nature Communications

Volume: 4, P: 1-7
Versatile stochastic dot product circuits based on nonvolatile memories for high performance neurocomputing and neurooptimization

Providing efficient and scalable specialized hardware for stochastic neural networks remains a challenge. Here, the authors propose a fast, energy-efficient and scalable stochastic dot-product circuit that may use either of two types of memory devices – metal-oxide memristors and floating-gate memories.

M. R. Mahmoodi
M. Prezioso
D. B. Strukov
ResearchOpen Access08 Nov 2019
Nature Communications

Volume: 10, P: 1-10
4K-memristor analog-grade passive crossbar circuit

The superior density of passive analog memristive devices can potentially enable efficient implementation of very large scale neural networks; however, device to device variability is currently too large to take advantage of this. Here, Kim et al demonstrate an impressive reduction in this variability, with a large passive memristive array.

H. Kim
M. R. Mahmoodi
D. B. Strukov
ResearchOpen Access31 Aug 2021
Nature Communications

Volume: 12, P: 1-11
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits

Memristive devices used in neuromorphic computing typically need to be accessed using transistors, adding circuit complexity and size. In this work, the authors demonstrate a neural network using a transistor-free passive memristor crossbar array, offering potential circuit miniaturisation and energy savings.

F. Merrikh Bayat
M. Prezioso
D. Strukov
ResearchOpen Access13 Jun 2018
Nature Communications

Volume: 9, P: 1-7
Correction: Corrigendum: Resistive switching and its suppression in Pt/Nb:SrTiO₃ junctions

Evgeny Mikheev
Brian D. Hoskins
Susanne Stemmer
Amendments and CorrectionsOpen Access07 Dec 2015
Nature Communications

Volume: 6, P: 1
Functional screening in human HSPCs identifies optimized protein-based enhancers of Homology Directed Repair

Here the authors describe a functional screening platform in human stem cells to identify and optimize protein-based gene editing additives that increase homologous directed recombination and have potential to improve gene therapy workflows.

Juan A. Perez-Bermejo
Oghene Efagene
Kristen L. Seim
ResearchOpen Access23 Mar 2024
Nature Communications

Volume: 15, P: 1-16
Publisher Correction: Stateful characterization of resistive switching TiO₂ with electron beam induced currents

Brian D. Hoskins
Gina C. Adam
Jabez J. McClelland
Amendments and CorrectionsOpen Access24 Jan 2018
Nature Communications

Volume: 9, P: 1
Resistive switching and its suppression in Pt/Nb:SrTiO₃ junctions

Understanding the resistive switching mechanism in oxide-based memories is an ongoing challenge. Here, the authors isolate an unintentional interfacial layer as the origin of resistive switching in Pt/Nb:SrTiO₃junctions, and show that suitable processing can remove this unwanted contribution.

Evgeny Mikheev
Brian D. Hoskins
Susanne Stemmer
ResearchOpen Access02 Jun 2014
Nature Communications

Volume: 5, P: 1-9
Memristive switching mechanism for metal/oxide/metal nanodevices

Nanoscale metal/oxide/metal devices that are capable of fast non-volatile switching have been built from platinum and titanium dioxide. The devices could have applications in ultrahigh density memory cells and novel forms of computing.

J. Joshua Yang
Matthew D. Pickett
R. Stanley Williams
Research15 Jun 2008
Nature Nanotechnology

Volume: 3, P: 429-433
Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

M. Prezioso
F. Merrikh Bayat
D. Strukov
ResearchOpen Access19 Feb 2016
Scientific Reports

Volume: 6, P: 1-6
Neuromorphic spintronics

This Review Article examines the development of spintronic devices for neuromorphic computing, exploring how magnetic tunnel junctions and magnetic textures can act as artificial neurons and synapses, as well as considering the challenges that exist in scaling up current systems.

J. Grollier
D. Querlioz
M. D. Stiles
Reviews02 Mar 2020
Nature Electronics

Volume: 3, P: 360-370
Stateful characterization of resistive switching TiO₂ with electron beam induced currents

Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.

Brian D. Hoskins
Gina C. Adam
Jabez J. McClelland
ResearchOpen Access07 Dec 2017
Nature Communications

Volume: 8, P: 1-11
Organic electronics for neuromorphic computing

This Review Article examines the development of organic neuromorphic devices, considering the different switching mechanisms used in the devices and the challenges the field faces in delivering neuromorphic computing applications.

Yoeri van de Burgt
Armantas Melianas
Alberto Salleo
Reviews13 Jul 2018
Nature Electronics

Volume: 1, P: 386-397
The role of ion transport phenomena in memristive double barrier devices

Sven Dirkmann
Mirko Hansen
Thomas Mussenbrock
ResearchOpen Access20 Oct 2016
Scientific Reports

Volume: 6, P: 1-12
Concept and modelling of memsensors as two terminal devices with enhanced capabilities in neuromorphic engineering

Alexander Vahl
Jürgen Carstensen
Franz Faupel
ResearchOpen Access13 Mar 2019
Scientific Reports

Volume: 9, P: 1-9
Diffusive Memristive Switching on the Nanoscale, from Individual Nanoparticles towards Scalable Nanocomposite Devices

Alexander Vahl
Niko Carstens
Abdou Hassanien
ResearchOpen Access22 Nov 2019
Scientific Reports

Volume: 9, P: 1-10
Advancements in 2D layered material memristors: unleashing their potential beyond memory

Kiran A. Nirmal
Dhananjay D. Kumbhar
Tae Geun Kim
ReviewsOpen Access21 Dec 2024
npj 2D Materials and Applications

Volume: 8, P: 1-27
Combinatorial optimization by weight annealing in memristive hopfield networks

Z. Fahimi
M. R. Mahmoodi
D. B. Strukov
ResearchOpen Access12 Aug 2021
Scientific Reports

Volume: 11, P: 1-10
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

B. Chakrabarti
M. A. Lastras-Montaño
D. B. Strukov
ResearchOpen Access14 Feb 2017
Scientific Reports

Volume: 7, P: 1-10
Correction: Corrigendum: A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

B. Chakrabarti
M. A. Lastras-Montaño
D. B. Strukov
Amendments and CorrectionsOpen Access27 Jul 2017
Scientific Reports

Volume: 7, P: 1

Search

The fourth circuit element

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors

Magnetic confinement of a neutral gas

Anisotropic MagnetoMemristance

Pattern classification by memristive crossbar circuits using ex situ and in situ training

Versatile stochastic dot product circuits based on nonvolatile memories for high performance neurocomputing and neurooptimization

4K-memristor analog-grade passive crossbar circuit

Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits

Correction: Corrigendum: Resistive switching and its suppression in Pt/Nb:SrTiO₃ junctions

Functional screening in human HSPCs identifies optimized protein-based enhancers of Homology Directed Repair

Publisher Correction: Stateful characterization of resistive switching TiO₂ with electron beam induced currents

Resistive switching and its suppression in Pt/Nb:SrTiO₃ junctions

Memristive switching mechanism for metal/oxide/metal nanodevices

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

Neuromorphic spintronics

Stateful characterization of resistive switching TiO₂ with electron beam induced currents

Organic electronics for neuromorphic computing

The role of ion transport phenomena in memristive double barrier devices

Concept and modelling of memsensors as two terminal devices with enhanced capabilities in neuromorphic engineering

Diffusive Memristive Switching on the Nanoscale, from Individual Nanoparticles towards Scalable Nanocomposite Devices

Advancements in 2D layered material memristors: unleashing their potential beyond memory

Combinatorial optimization by weight annealing in memristive hopfield networks

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

Correction: Corrigendum: A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

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