The integration of oxide nanoelectronics with silicon platforms is a necessary step for the fabrication of ultrahigh-density devices. Here, the authors grow a LaAlO3/SrTiO3interface directly on silicon, and show the reversible creation of a two-dimensional electron gas confined within nanowires located on the surface.
- J.W. Park
- D.F. Bogorin
- C.B. Eom
