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Showing 1–9 of 9 results
Advanced filters: Author: Daniele Caimi Clear advanced filters

  • The strong electro-optical response of BaTiO3 could be useful for making high-speed switches for optical telecommunications. Abel et al. demonstrate the ability to maintain this response in BaTiO3films grown directly onto silicon, extending its potential to the development of silicon photonics.

    • Stefan Abel
    • Thilo Stöferle
    • Jean Fompeyrine
    Research
    Nature Communications
    Volume: 4, P: 1-6

  • The integration of barium titanate thin films with silicon-based waveguides enables the operation of efficient electro-optic switches and modulators at temperatures as low as 4 K, with potential applications in quantum computing and cryogenic computing technologies.

    • Felix Eltes
    • Gerardo E. Villarreal-Garcia
    • Stefan Abel
    Research
    Nature Materials
    Volume: 19, P: 1164-1168

  • Lithium niobate plays an important role in integrated photonics, but its widespread application requires a reliable solution. Here, the authors present a wafer-scale approach to LNOI integration via wafer bonding to silicon nitride PICs.

    • Mikhail Churaev
    • Rui Ning Wang
    • Tobias J. Kippenberg
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-9

  • A frequency-tunable laser based on a hybrid silicon nitride and lithium niobate integrated photonic platform has a fast tuning rate and could be used for optical ranging applications.

    • Viacheslav Snigirev
    • Annina Riedhauser
    • Tobias J. Kippenberg
    ResearchOpen Access
    Nature
    Volume: 615, P: 411-417

  • A route to scalability for superconducting quantum computation is the modular approach, which however requires coherent microwave-to-optical conversion. Here the authors use gallium phosphide optomechanical crystal cavities for this task, exploiting their high refractive index and large OM coupling rate.

    • Simon Hönl
    • Youri Popoff
    • Paul Seidler
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-9

  • Researchers demonstrate a multilevel non-volatile phase shifter memory that is based on the monolithic integration of BaTiO3 thin films and silicon waveguides. By manipulating ferroelectric domains in BaTiO3 with electrical control signals, they achieve analogue and non-volatile optical phase tuning.

    • Jacqueline Geler-Kremer
    • Felix Eltes
    • Stefan Abel
    Research
    Nature Photonics
    Volume: 16, P: 491-497

  • InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal–oxide–semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power logic systems.

    • Clarissa Convertino
    • Cezar B. Zota
    • Kirsten E. Moselund
    Research
    Nature Electronics
    Volume: 4, P: 162-170