Phase engineering of 2D transition metal dichalcogenides enables the investigation of emerging physical properties. Here, the authors report a phase selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2 thin films from MoSe2 nanoribbons, showing Tomonaga-Luttinger liquid behaviour in the CrSe2 mirror twin boundaries.
- Meizhuang Liu
- Jian Gou
- Andrew T. S. Wee