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Showing 1–3 of 3 results
Advanced filters: Author: Francesca Garesci Clear advanced filters

  • A magnetic random-access memory device that has an antiferromagnetic material as its storage element can be electrically read using ferromagnetic tunnelling.

    • Pedram Khalili Amiri
    • Francesca Garesci
    • Giovanni Finocchio
    News & Views
    Nature Electronics
    Volume: 6, P: 407-408

  • Anti-ferromagnetic based memories have a wide range of advantages over their ferromagnetic counterparts, however, their electrical signatures of switching are complicated by spurious signals. Here, Arpaci et al demonstrate an experimental method to distinguish between anti-ferromagnetic switching, and such spurious signatures.

    • Sevdenur Arpaci
    • Victor Lopez-Dominguez
    • Pedram Khalili Amiri
    ResearchOpen Access
    Nature Communications
    Volume: 12, P: 1-10

  • Pillars of antiferromagnetic PtMn, grown on a heavy-metal layer, can be reversibly switched between different magnetic states by electric currents, illustrating the potential of silicon-compatible antiferromagnetic materials in the development of memory and computing devices.

    • Jiacheng Shi
    • Victor Lopez-Dominguez
    • Pedram Khalili Amiri
    Research
    Nature Electronics
    Volume: 3, P: 92-98