Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces by field effect drew significant attention to the development oxide-based electronics. Increase in the gate capacitance of LaAlO3/SrTiO3-based field-effect transistor is particularly important to the conductivity modulation and the development of logic device. Here, we demonstrate that annihilation of quantum capacitance and colossal capacitance enhancement (about 1000%) in the LaAlO3/SrTiO3 heterostructures by DC gate voltage at room temperature, which we attribute to the motion of oxygen vacancies through the LaAlO3 layer thickness. The capacitor devices would provide a platform for the further development and application of metal-oxide-semiconductor transistor devices.
- Shuxiang Wu
- Guangheng Wu
- Shuwei Li
