Ferroelectric hafnia-based thin films are promising for applications in memories and neuromorphic devices due to their robust ferroelectricity at reduced dimensions. Here, the authors demonstrate stabilization of the metastable orthorhombic phase in Hf0.5 Zr0.5O2 films by interface engineering with a hole doping mechanism.
- Shu Shi
- Haolong Xi
- Jingsheng Chen
