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Showing 1–9 of 9 results
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  • Quantum mechanics predicts that objects can simultaneously exist in a superposition of two states. Kneeet al.propose and demonstrate experimentally a protocol which fully confirms this prediction, by testing the so-called Leggett–Garg inequality in a non-invasive manner.

    • George C. Knee
    • Stephanie Simmons
    • Simon C. Benjamin
    ResearchOpen Access
    Nature Communications
    Volume: 3, P: 1-6

  • The coherence lifetime of a material system to be used in quantum information protocols has to be long enough for several quantum operations to occur before the system loses its quantum coherence. The spins of impurities in silicon have been shown to have coherence lifetimes up to tens of milliseconds, but now all records are beaten with those in high-purity silicon reaching a few seconds.

    • Alexei M. Tyryshkin
    • Shinichi Tojo
    • S. A. Lyon
    Research
    Nature Materials
    Volume: 11, P: 143-147

  • Clock transitions, typically observed in arrays of trapped atoms, can now be observed for electron spins in silicon doped with bismuth.

    • Gary Wolfowicz
    • Alexei M. Tyryshkin
    • John J. L. Morton
    Research
    Nature Nanotechnology
    Volume: 8, P: 561-564

  • Spin ensembles, such as those used in liquid-state nuclear magnetic resonance, have been important for the development of quantum control methods. However, these demonstrations contained no entanglement, which is essential for a quantum information processor. This study reports the on-demand generation of entanglement between an ensemble of electron and nuclear spins in phosphorus-doped silicon, simultaneously creating 1010 spin pairs.

    • Stephanie Simmons
    • Richard M. Brown
    • John J. L. Morton
    Research
    Nature
    Volume: 470, P: 69-72

  • Spin qubits in systems with strong spin–orbit coupling can be electrically controlled, but are usually affected by short coherence times. Here, coherence times up to 10 ms are obtained for strain-engineered hole states bound to boron acceptors in silicon 28.

    • Takashi Kobayashi
    • Joseph Salfi
    • Sven Rogge
    Research
    Nature Materials
    Volume: 20, P: 38-42