Crystalline Ga2O3 is an ultra-wide bandgap oxide semiconductor, but electron conduction in amorphous Ga2Ox has never been attained to date. Here we succeeded in converting amorphous Ga2Ox to a semiconductor with the bandgap of ~4.12 eV and the electron mobility ~8 cm2 V−1 s−1. The key is to suppress charge compensation defects by increasing the film density and suppress formation of oxygen-poor and oxygen-excess defects. It produces thin-film transistors and Schottky diodes with high on currents and on/off ratios.
- Junghwan Kim
- Takumi Sekiya
- Toshio Kamiya
