A van der Waals epitaxial strategy is reported for growing intrinsic quantum dots (QDs) by modulating interfacial couplings on van der Waals surfaces. This method overcomes lattice mismatch constraints and produces versatile III–V and IV–VI QDs with controllable morphologies, broadening near-infrared photoresponse in InSb QDs/MoS2 by efficient interlayer charge transfer.
- Kaiyao Xin
- Lian Li
- Shenqiang Zhai