The mechanisms involved in the damage of CVD-grown graphene (Gr) and MoS2 are investigated during a roll-based transfer process. We identify two different damage mechanisms, i.e., instability-induced damage and tensile strain-induced damage. The two mechanisms compete, depending on the thickness of the transfer medium, and induce dissimilar damage. By optimizing the thickness, we realize and demonstrate the damage-free transfer of 2D materials. The sheet resistance and mobility of transferred Gr are 235 ± 29 Ω sq–1 and 2250 cm2 V–1 s–1, respectively, with no microscopic cracks or tear-out damage.
- Chan Kim
- Min-Ah Yoon
- Kwang-Seop Kim
