Infrared-active InAs quantum dots (QDs) were synthesized with zinc coordination complexes for surface passivation, resulting in improved optoelectronic properties. The resulting InAs QDs doped with Zn showed narrowed size distributions, reduced surface defects, and modulation of electronic properties through Zn surface doping. These InAs:Zn QDs exhibited improved electrical properties when integrated into infrared photodiodes.
- Seongchan Kim
- Sooyeon Yeon
- Nuri Oh
