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2D materials have attracted significant attention for memristor applications, but a complete understanding of the switching mechanisms is still lacking. Here, the authors report an operando electron microscopy study of lateral MoS₂ memristors, showing real-time imaging of the dynamics of Ag conductive filaments during bias voltage cycles.

Double-sided epitaxy of van der Waals materials through atomic membranes is demonstrated, enabling electrons to resonantly tunnel between aligned topological insulator surfaces with the conservation of energy, momentum and spin helicity.

Wide- and narrow-bandgap semiconductor nanostructures were monolithically integrated on graphene layers by direct heteroepitaxial growth. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated. Furthermore, dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths were fabricated using the hybrid nanostructures.

We report on the fabrication and characteristics of an individually addressable GaN microdisk LED array in free-standing and ultrathin form. GaN microdisk array was grown on graphene microdots, and the microstructures coated with a polyimide layer were easily separated from the substrate to form an ultrathin free-standing film. Crossbar configuration of metal leads enabled each microdisk LED in an array to be uniquely addressable. The devices in free-standing form exhibited stable electrical and optoelectronic characteristics under extreme bending conditions and continuous operation mode despite the absence of a heat dissipating substrate.

Here, we utilize large-size scalable single-crystal 2D films to grow single crystalline inorganic semiconductors. Centimeter-scale hexagonal boron nitride (h-BN) films were synthesized on a single-crystal Ni(111) using chemical vapor deposition (CVD). Single-crystal GaN layers were directly grown on h-BN using metal–organic vapor phase epitaxy. The CVD-grown h-BN exhibited many atomic cliffs that enabled us to grow high-density GaN islands to be merged as homogeneous and flat GaN films. We also investigated the crystallinity and growth mechanism of the GaN films grown on CVD-grown h-BN using transmission electron microscopy and X-ray diffraction.

We report the catalyst-free growth of InAs/In_xGa_1−xAs coaxial nanorod heterostructures on large-area graphene layers using molecular beam epitaxy and our investigation of the chemical composition and crystal structure of these heterostructures using electron microscopy. Cross-sectional electron microscopy images showed that In_xGa_1−xAs layers, having uniform composition, coated heteroepitaxially the entire surface of the InAs nanorods, without interfacial layers or structural defects. The catalyst-free growth mechanism of InAs nanorods on graphene was investigated using in situ reflection high-energy electron diffraction.

Centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films were heteroepitaxially grown on Ni(111) single-crystal substrates using atmospheric pressure chemical vapor deposition with ammonia-borane single precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-used. Over repeated growth and transfer after the initial annealing, no significant degradation of Ni(111) substrates was observed and the crystallinity of h-BN layers was reproduced reliably. The grown h-BN films showed typical physical characteristics of h-BN, with a high uniformity over a wide area. The large-area synthesis and transfer of atomically thin uniform epitaxial h-BN layers can be applied in various fields where high quality two-dimensional insulating layers are required.