We propose hybrid approach of two classes of PbS QD as NIR light absorber and IGZO as the photogenerated charges acceptor/transport semiconductor to create phototransistor for near infrared (NIR) detection/imaging. Such hybrid phototransistor shows photodetection capability between 700 and 1400 nm. We demonstrate a NIR (1300 nm) imager using photogating inverter pixel based on PbS/IGZO hybrid phototransistor.
- Do Kyung Hwang
- Young Tack Lee
- Seongil Im
