Area selective atomic layer deposition (AS-ALD) has been recently proposed as a controlled growth method, but the patterning resolution and selectivity require improvements. Here, the authors report a superlattice-based AS-ALD method to deposit various materials onto 2D MoS2-MoSe2 lateral superlattices, with a minimum half-pitch size of ~ 10 nm.
- Jeongwon Park
- Seung Jae Kwak
- Kibum Kang