Designing memristor-integrated passive crossbar arrays to accelerate artificial neural networks with high reliability remains a challenge. Here, the authors propose a self-rectifying resistive switching device incorporated into a crossbar array with a density of 1 kb whose operational performance is assessed in terms of defected-cell proportion, reading margin, and selection functionality.
- Kanghyeok Jeon
- Jin Joo Ryu
- Gun Hwan Kim
