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Pockels coefficients and permittivity are measured in barium titanate and lithium niobate from 100 MHz to 330 GHz and device geometries are proposed to maintain a constant electro-optic response in BTO devices.

Self-powered graphene photodetectors based on the photothermoelectric effect (PTE) could provide low-noise operation in the telecom and mid-infrared ranges, but their bandwidth is usually limited. Here, the authors report the realization of PTE graphene photodetectors integrated with a metamaterial perfect absorber, showing a 3-dB bandwidth above 400 GHz.

Tamm plasmon thermal emitters can provide efficient infrared emission, but are limited by design complexity. Now, the inverse design of Tamm modes facilitated by CdO films on aperiodic dielectric reflectors enables emission with an on-demand spectrum.

Photonic crystal nanocavities can strongly enhance the interaction between light and matter. Researchers have now demonstrated high-speed signal generation and all-optical switching with energies in the femtojoule and sub-femtojoule regime.

Kerr frequency combs are well suited for high-capacity data transmission with phase-sensitive modulation formats. This work demonstrates error-free transmission with data rates of up to 1.44 Tbit s⁻¹, spectral efficiencies of up to 6 bit s⁻¹ Hz⁻¹ and transmission distances of up to 300 km.

We demonstrate plasmonic micro-racetrack modulators for intensity-modulated transmission at 408 Gbps and 12.3 femtojoules per bit. The modulators offer wide bandwidth and the devices show improved temperature stability over conventional approaches.

The low carrier mobilities of TMDCs pose a challenge for applications in high-speed photodetection. Integrating vertical two-dimensional heterostructures with photonic waveguides allows the intrinsic speed limitations to be overcome and record-high photodetection bandwidths to be achieved.

Increasing bandwidth demands in optical communications requires components to be compact with energy-efficient operation. Here, the authors demonstrate plasmonic IQ modulators on a silicon photonics platform with phase shifters, operating with sub-1V electronics at 100 GBaud and low electrical energy consumption.

The monolithic integration of electronic and plasmonic technologies can be used to create electro-optic transmitters capable of symbol rates beyond 100 GBd.

Most efficient terahertz detection schemes rely on complex free space optics and require high-power lasers. Here, the authors report an integrated plasmonic terahertz detector on a silicon photonics platform, with 2.5 THz bandwidth and a 65 dB dynamical range operating at an optical power of only 63 nW.

Researchers demonstrate the real-time generation and fast Fourier transformation of 10.8 Tbit s⁻¹ and 26 Tbit s⁻¹ line-rate optical frequency-division multiplexed signals, using an all-optical fast Fourier transform scheme based on cascaded delay interferometers and a time gate.

To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon waveguides via aligned nanowire.

Electro-optic modulators based on epitaxial barium titanate (BTO) integrated on silicon exhibit speeds up to 50 Gbit s^–1 while the Pockels coefficient of the BTO film is found to be approaching the bulk value.

On-chip light sources for silicon photonic circuits remain a challenge since the indirect bandgap of silicon prevents efficient light emission. The authors demonstrate that lasing can be achieved by combining standard silicon-on-insulator waveguides with dye-doped organic cladding materials to provide optical gain.

Ohmic losses in plasmonic devices can be reduced by exploiting ‘resonant switching’, in which light couples to surface plasmon polaritons only when in resonance and bypasses them otherwise.

A direct wireless-to-optical receiver in a transparent optical link is achieved, thanks to a subwavelength two-dimensionally localized gap-plasmon mixer encoding wireless information directly onto optical signals.

This paper demonstrates a 53 km free-space-optical communication link mimicking a satellite-downlink. It achieves 1Tbit/s transmission by addressing turbulence and low-SNR issues through adaptive optics and a novel four-dimensional modulation format.

Photon emission is observed during the resistive switching process of memristors with an atomic-sized footprint and a scalable fabrication procedure.

The necessity to design transistors at increasingly smaller scale is at the heart of future technological developments. The authors report a fabrication method to produce uniform electrochemical metallization cells at the nanometer scale with precisely designed geometries and which demonstrate applicable functionality.

Vanadium dioxide is a strongly correlated material interesting for its ultra-fast resistive switching controlled by an electric-field-driven insulator-metal transition. Here, VO₂ stochastic oscillator power sensors for mm-wave to sub-THz radiation are demonstrated, displaying high responsivities, low noise, and a small scalable footprint.

The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.