The fabrication of transistors using vertical, six-sided core–multishell indium gallium arsenide nanowires with an all-surrounding gate on a silicon substrate combines the advantages of a three-dimensional gate architecture with the high electron mobility of the III–V nanowires, drastically enhancing the on-state current and transconductance.
- Katsuhiro Tomioka
- Masatoshi Yoshimura
- Takashi Fukui
