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Showing 1–8 of 8 results
Advanced filters: Author: M. T. Greenaway Clear advanced filters

  • Multilayer stacks of graphene and related two-dimensional crystals can be tailored to create new classes of functional materials. Britnell et al. report resonant tunnelling of Dirac fermions and tunable negative differential conductance in a graphene-boron nitride-graphene transistor.

    • L. Britnell
    • R. V. Gorbachev
    • L. Eaves
    ResearchOpen Access
    Nature Communications
    Volume: 4, P: 1-5

  • For small twist angles, electrons can resonantly tunnel between graphene layers in a van der Waals heterostructure. It is now shown that the tunnelling not only preserves energy and momentum, but also the chirality of electronic states.

    • M. T. Greenaway
    • E. E. Vdovin
    • L. Eaves
    Research
    Nature Physics
    Volume: 11, P: 1057-1062

  • Magneto-oscillations have revealed many interesting phenomena in graphene and quantum Hall systems, but they are typically measured at low currents and in equilibrium. Here, the authors report several non-equilibrium quantum effects observed in magneto-oscillations in graphene at high currents.

    • M. T. Greenaway
    • P. Kumaravadivel
    • L. Eaves
    ResearchOpen Access
    Nature Communications
    Volume: 12, P: 1-6

  • The physics of charge transport in graphene becomes particularly interesting near the Dirac point. Here, the authors demonstrate a negative minority carrier mobility due to drag between majority and minority carriers in graphene at the charge neutrality point.

    • Leonid A. Ponomarenko
    • Alessandro Principi
    • Andre K. Geim
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-6

  • Inverted Mexican hat valence band is a desirable feature of van der Waal materials as it can yield new phases and functionalities, but it has been observed in only a few materials. Here the authors use experiments and calculations to reveal this feature in the van der Waals ferroelectric semiconductor In2Se3.

    • James Felton
    • Jordan Harknett
    • Amalia Patanè
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-9

  • Hexagonal boron nitride is used extensively as an encapsulation layer or as a tunnel or insulating barrier in emerging devices. The authors study electron tunnelling through localised electronic states in hexagonal boron nitride which could be exploited for new quantum devices.

    • M. T. Greenaway
    • E. E. Vdovin
    • L. Eaves
    ResearchOpen Access
    Communications Physics
    Volume: 1, P: 1-7

  • Electron-electron interactions are known to play an important role in the in-plane transport properties of graphene-based devices. Here, the authors investigate the role of electron-electron interactions on electrons tunnelling between the layers of a graphene/hBN/graphene tunnel transistor and demonstrate the emergence of a Coulomb gap at low temperatures and in quantising magnetic fields.

    • Evgenii E. Vdovin
    • Mark T. Greenaway
    • Laurence Eaves
    ResearchOpen Access
    Communications Physics
    Volume: 6, P: 1-8