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The authors demonstrate a polarization switching pathway through an orthorhombic-tetragonal orthorhombic phase transition in ferroelectric Hf0.5Zr0.5O2, where the intermediate state, non-polar P42/nmc T-phase, is metastable.

Designing ultra small metal nanoclusters or single atoms with metallic state is a challenge. Here, the authors demonstrate the stabilization of ultra small silver clusters in the nearly-metallic state by oxygen adsorption at high temperature, using in situ spectroscopy and microscope technologies.

A ferroelectric semiconductor field-effect transistor, which uses the two-dimensional ferroelectric semiconductor α-In₂Se₃ as a channel material, could offer enhanced capabilities compared with conventional ferroelectric field-effect transistors in non-volatile memory applications.

High-performance indium oxide transistors with dimensions smaller than advanced silicon technologies can be fabricated using an industry-compatible atomic layer deposition process.

A high-κ dielectric ceramic, magnesium niobate, can be epitaxially grown on a mica substrate and then transferred to form the gate dielectric in molybdenum disulfide transistors, providing van der Waals interfaces and high robustness to temperature and voltage.

The authors uncover a hidden tetragonal-orthorhombic phase transition pathway which provides an approach to engineer domain orientations and further remanent polarization in polycrystalline HfO₂-based ferroelectric films.

For the object recognition in lightless environments, the authors propose the olfactory-tactile machine learning approach, inspired by the star-nose mole’s neural system. They show how bionic flexible sensor arrays allow for real-time acquisition of object’s form and odor when touching it.

By isolating one-dimensional tellurium nanowires in boron nitride nanotubes, the electronic properties of the atomic chains can be measured and the structures used to create field-effect transistors.

The simultaneous achievement of high breakdown voltage and low resistance is a contradictory point because it would require high and low doping simultaneously. Here, Zhou et al. achieve a power figure-of-merit of 13.2 GW/cm2 through hole injection and conductivity modulation effect.

A method is introduced to quantify short-range order in multicomponent alloys using atom probe tomography, which enables further understanding and materials design related to atomic-scale solute engineering.

A field-effect MoS<Subscript>2</Subscript> transistor with a negative capacitor in its gate shows stable, hysteresis-free performance characterized by a sub-thermionic sub-threshold slope.

Single-site isolated rhodium species anchored on zeolites or titanium dioxide are shown to catalyse the direct conversion of methane to methanol and acetic acid, using oxygen and carbon monoxide under mild conditions.

The accidental band-crossing origin of Weyl nodes paired with the absence of sizeable band gaps hampers the exploitation of low-energy relativistic quasiparticles in Weyl semimetals. In a gate-tunable high-quality tellurene film, quantum Hall measurements unveil a topologically non-trivial π Berry phase caused by unconventional Weyl nodes in these tellurium two-dimensional sheets.

A schematic model of SGSM2 suppressing the progression of RAS^WT thyroid cancer.

The PEDOT: PSS/PNIPAM hydrogel was simply prepared by ultrasound-enhanced free radical polymerization in an ice bath, in open air rather than spending hours under an N₂ purged environment. The resulting conductive hydrogel had a uniform texture and good flexibility for rapid resistance responses and color changes when it was exposed to temperature stimulations. The dual actions of hydrogen bonding and hydrophobic aggregation weaken the Coulomb interaction between PEDOT⁺ and PSS⁻ for better conductivity that is suitable for breathing monitoring and other wearable sensing applications.