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Showing 1–3 of 3 results
Advanced filters: Author: Mikhail I. Vexler Clear advanced filters

  • This Perspective assesses the performance limits of hexagonal boron nitride when used as a gate insulator in complementary metal–oxide–semiconductor (CMOS) devices based on two-dimensional materials, concluding that due to excessive leakage currents, the material is unlikely to be suitable for use in ultrascaled CMOS devices.

    • Theresia Knobloch
    • Yury Yu. Illarionov
    • Tibor Grasser
    Reviews
    Nature Electronics
    Volume: 4, P: 98-108

  • The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D technologies.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    ReviewsOpen Access
    Nature Communications
    Volume: 11, P: 1-15