Two-dimensional distorted orthorhombic GeS microribbons has been synthesized applying vapor-liquid-solid and vapor-solid mechanism-based chemical vapor transport. Polarized Raman and photoluminescence characterizations show the significantly angle-dependent intensity and anisotropic optical properties. Additionally, we probed the anisotropic electric properties by fabricating back-gate cross-shaped field effect transistors. In-plane direct current measurement demonstrated the charge carrier transport anisotropy and its anisotropic current ratio can be linearly adjusted by changing the gate voltage under dark and illumination conditions.
- Zhangfu Chen
- Woohyun Hwang
- Heon-Jin Choi