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Showing 1–4 of 4 results

Advanced filters: Author: Ningxuan Dai Clear advanced filters

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

The epitaxial growth of bilayer molybdenum disulfide on sapphire enables the fabrication of field-effect transistor devices with improved performance in carrier mobility and on-state current over traditional monolayer films.

Lei Liu
Taotao Li
Xinran Wang
Research04 May 2022
Nature

Volume: 605, P: 69-75
Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Low-temperature ultraclean integration of large-area MoS₂ thin-film transistors with nitride micro-LEDs through a back end of line process enables the demonstration of displays with high resolution and uniformity.

Wanqing Meng
Feifan Xu
Xinran Wang
Research09 Sept 2021
Nature Nanotechnology

Volume: 16, P: 1231-1236
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Using a monolayer molecular crystal as a seeding layer, hafnium oxide dielectrics with an equivalent oxide thickness of only 1 nm can be deposited on graphene, molybdenum disulfide and tungsten diselenide.

Weisheng Li
Jian Zhou
Xinran Wang
Research09 Dec 2019
Nature Electronics

Volume: 2, P: 563-571
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Unidirectional alignment of MoS₂ domains during epitaxial growth on C/A sapphire enables the realization of large-area MoS₂ single crystals.

Taotao Li
Wei Guo
Xinran Wang
Research02 Sept 2021
Nature Nanotechnology

Volume: 16, P: 1201-1207