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Showing 1–12 of 12 results
Advanced filters: Author: Pinshane Y. Huang Clear advanced filters

  • Despite recent progress in the synthesis and characterization of molybdenum disulphide, little is yet known about its microstructure. Using refined chemical vapour deposition synthesis, high-quality crystals of monolayer molybdenum disulphide have now been grown. Single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.

    • Arend M. van der Zande
    • Pinshane Y. Huang
    • James C. Hone
    Research
    Nature Materials
    Volume: 12, P: 554-561

  • A new chemical vapour deposition method enables transition-metal dichalcogenide (TMD) monolayers to be grown directly on insulating silicon dioxide wafers, demonstrating the possibility of wafer-scale batch fabrication of high-performance devices with TMD monolayers.

    • Kibum Kang
    • Saien Xie
    • Jiwoong Park
    Research
    Nature
    Volume: 520, P: 656-660

  • Single-atom-thick graphene sheets can be produced at metre scales, bringing large-area applications in electronics and photovoltaics closer. However, such large pieces can be expected to be polycrystalline, so that it is important to determine the nature and size of grains in large-area graphene. This paper uses a combination of old and new transmission electron microscope techniques to carry out atomic-resolution imaging at grain boundaries as well as mapping of the location, orientation and shape of several hundred grains and boundaries with diffraction-filtered imaging. By correlating grain imaging with scanned probe and transport measurements, it is shown that the grain boundaries dramatically weaken the mechanical strength of graphene membranes, but do not as dramatically alter their electrical properties.

    • Pinshane Y. Huang
    • Carlos S. Ruiz-Vargas
    • David A. Muller
    Research
    Nature
    Volume: 469, P: 389-392

  • This versatile and scalable ‘patterned regrowth’ fabrication process produces one-atom-thick sheets containing lateral junctions between electrically conductive graphene and insulating hexagonal boron nitride, paving the way for flexible, transparent electronic device films.

    • Mark P. Levendorf
    • Cheol-Joo Kim
    • Jiwoong Park
    Research
    Nature
    Volume: 488, P: 627-632

  • The bending stiffness of few-layer graphene is shown to decrease significantly with the bending angle due to shear and slip between the atomic layers, which culminate in superlubric behaviour as the bending angle further increases.

    • Edmund Han
    • Jaehyung Yu
    • Arend M. van der Zande
    Research
    Nature Materials
    Volume: 19, P: 305-309

  • Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm

    • Jangyup Son
    • Junyoung Kwon
    • Arend M. van der Zande
    ResearchOpen Access
    Nature Communications
    Volume: 9, P: 1-9

  • The ratio of in-plane stiffness to out-of-plane bending stiffness of graphene is shown to be similar to that of a piece of paper, which allows ideas from kirigami (a variation of origami that allows cutting) to be applied to micrometre-scale graphene sheets to build mechanically stretchable yet robust electrodes, springs and hinges.

    • Melina K. Blees
    • Arthur W. Barnard
    • Paul L. McEuen
    Research
    Nature
    Volume: 524, P: 204-207