2D semiconductors are attracting attention as a potential alternative for post-silicon electronics, but the fabrication of high-performance 2D p-type transistors remains a challenge. Here, the authors report the realization of bilayer WSe2 p-type transistor arrays with on-state currents up to 421 μA/μm, on/off ratios exceeding 107 and subthreshold swings as low as 75 mV/decade.
- Subir Ghosh
- Muhtasim Ul Karim Sadaf
- Saptarshi Das
