In the standard Si transistor gate stack, replacing conventional dielectric HfO2 with an ultrathin ferroelectric–antiferroelectric HfO2–ZrO2 heterostructure exhibiting the negative capacitance effect demonstrates ultrahigh capacitance without degradation in leakage and mobility, promising for ferroelectric integration into advanced logic technology.
- Suraj S. Cheema
- Nirmaan Shanker
- Sayeef Salahuddin
