MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.
- Roda Nur
- Takashi Tsuchiya
- Mitsuru Takenaka