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Showing 1–12 of 12 results

Advanced filters: Author: Roger Proksch Clear advanced filters

Assembly of submicrometre ferromagnets in gallium arsenide semiconductors

Jing Shi
James M. Kikkawa
Pierre M. Petroff
Research26 Oct 1995
Nature

Volume: 377, P: 707-710
Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon

Suraj S. Cheema
Daewoong Kwon
Sayeef Salahuddin
Amendments and Corrections06 May 2020
Nature

Volume: 581, P: E5
Publisher Correction: Reply to: On the ferroelectricity of CH₃NH₃PbI₃ perovskites

Yongtao Liu
Liam Collins
Olga S. Ovchinnikova
Amendments and Corrections30 Sept 2019
Nature Materials

Volume: 18, P: 1264
Reply to: On the ferroelectricity of CH₃NH₃PbI₃ perovskites

Yongtao Liu
Liam Collins
Olga S. Ovchinnikova
Research16 Sept 2019
Nature Materials

Volume: 18, P: 1051-1053
Solid-state memories based on ferroelectric tunnel junctions

A tunnel junction that consists of a ferroelectric barrier layer sandwiched between two electrodes can operate as a fast, low-power and non-volatile nanoscale solid-state memory.

André Chanthbouala
Arnaud Crassous
Agnès Barthélémy
Research04 Dec 2011
Nature Nanotechnology

Volume: 7, P: 101-104
Magnetite defines a vertebrate magnetoreceptor

Carol E. Diebel
Roger Proksch
Michael M. Walker
Research20 Jul 2000
Nature

Volume: 406, P: 299-302
Virus Tolerance, Plant Performance of Transgenic Tomato Plants Expressing Coat Protein from Tobacco Mosaic Virus

Richard S. Nelson
Sheila M. McCormick
Roger N. Beachy
Research01 Apr 1988
Bio/Technology

Volume: 6, P: 403-409
Chemical nature of ferroelastic twin domains in CH₃NH₃PbI₃ perovskite

Combined multimodal atomic force microscopy, ion microscopy, ion mass spectrometry and infrared spectrometry experiments explore the chemical properties of ferroelastic twin domains in hybrid lead halide perovskites.

Yongtao Liu
Liam Collins
Olga S. Ovchinnikova
Research27 Aug 2018
Nature Materials

Volume: 17, P: 1013-1019
Enhanced ferroelectricity in ultrathin films grown directly on silicon

Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic layer deposition, even at thicknesses of just one nanometre.

Suraj S. Cheema
Daewoong Kwon
Sayeef Salahuddin
Research22 Apr 2020
Nature

Volume: 580, P: 478-482
Distance and relative humidity contributions to the atomic force microscopy off surface electrostatic response of soda lime glass

Iaroslav Gaponenko
Ryan Wagner
Patrycja Paruch
ResearchOpen Access25 Apr 2025
Scientific Reports

Volume: 15, P: 1-12
Protection Against Potyvirus Infection in Transgenic Plants: Evidence for Broad Spectrum Resistance

David M. Stark
Roger N. Beachy
Research01 Dec 1989
Bio/Technology

Volume: 7, P: 1257-1262
Direct observation of ferroelectricity in two-dimensional MoS₂

Alexey Lipatov
Pradeep Chaudhary
Alexei Gruverman
ResearchOpen Access15 Mar 2022
npj 2D Materials and Applications

Volume: 6, P: 1-9