The scattering of charge carriers with line defects, i.e., threading dislocations, needs to be decreased to further enhance electron mobility of lattice-mismatched epitaxial films and heterostructures for the application of high-performance electronic devices. Here, we report a strategy to post-treat epitaxial La-doped BaSnO3 films by delicately controlling oxygen partial pressure p(O2), which achieved significant increase in room temperature electron mobility to 122 cm2∙V−1∙s−1. This mobility enhancement is attributed to an oxygen vacancy-assisted recovery process that reduces the density of dislocations by accelerating the movement of dislocations in ionic crystals under p(O2)-controlled treatment, despite an increase in the density of charged point defects.
- Daseob Yoon
- Sangbae Yu
- Junwoo Son
