Architectured ZnO nanostructures were grown by van der Waals (vdW) heteroepitaxy on hexagonal BN (hBN) layers with artificially patterned atomic ledges. Electron microscopic and theoretical computational analyses presented non-covalent epitaxial features of domain-aligned incommensurate ZnO/hBN heterostructure. The vdW epitaxial ZnO/hBN heterostructures exhibited excellent electrical insulation of hBN, and were applied to fabricate the ultraviolet photodetector devices, as an example of functional optoelectronic device applications.
- Hongseok Oh
- Young Joon Hong
- Gyu-Chul Yi
