We propose the simple and novel ‘aqueous route’ for realizing oxide thin-film transistors (TFTs) at low annealing temperatures <200 °C with low cost. These results provide substantial progress toward solution-processed metal-oxide TFT through naturally born unique indium complex and post annealing. They exhibit acceptable electrical performance with good large-area uniformity at low temperature. The additional vacuum annealing facilitates the condensation reaction by effective removal of byproduct water molecule and activates the In2O3 TFT at low temperature, even with 100 °C annealing. Also, we have demonstrated the flexible and transparent oxide TFTs on a plastic substrate with good stability to the external gate bias stress.
- Young Hwan Hwang
- Jin-Suk Seo
- Byeong-Soo Bae
